欢迎有志于研究模拟射频芯片和数字雷达算法芯片设计的同学加入。

课题组研究方向：

毫米波/太赫兹相控阵雷达芯片、雷达算法芯片

低轨卫星与5/6G毫米波通信相控阵收发机芯片

新型模拟射频MoS2芯片设计

高速ADPLL、FMCW-PLL和CDR电路设计

主要学术成果：

发表在包含行业顶级期刊TCAS-I/II和TMTT在内的50+篇论文：

集成电路总结： 2 TMTT ; 1 TCAS-I; 1 TCAS-II;3 RFIC; 1 CICC; 2 A-SSCC; 4 ESSCIRC。

授权13项中国专利

教育背景：

2011年-2016年复旦大学，微电子学与固体电子学，博士
2007年-2011年上海交通大学，微电子学与固体电子学，学士

学术经历：

2021年-至今复旦大学副教授
2018年-2021年复旦大学，青年副研究员
2017年-2018年在复旦大学从事博士后工作，主要研究汽车毫米波雷达技术，毫米波成像技术
2016年-2017年在上海加特兰微电子公司工作，成为公司创始工程师，设计77GHz毫米波汽车雷达产品，主要负责77GHzFMCW锁相环和高性能放大器，已用于77GHz和60GHz量产芯片中。
2012年-2014年在新加坡南洋理工VIRTUS LAB 工作，主要从事60GHz通信芯片设计

已发表期刊论文： 

1. Z. Xu, B. Hu, T. Wu, Y. Yao, Y. Chen, J. Ren, S. Ma, “A 12-Bit 50 MS/s Split-CDAC-Based SAR ADC Integrating Input Programmable Gain Amplifier and Reference Voltage Buffer,” Electronics, vol. 11, no. 12, p. 1841, Jun. 2022. 

2. T. Wu, Z. Cao, Z. Xu, L. Dai, W. Mao, J. He, S. Ma, H. Yu, A 130-to-220-GHz Frequency Quadrupler with 80 dB Dynamic Range for 6G Communication in 0.13-μm SiGe Process. Electronics, vol. 11, no. 12, p. 825, Jun. 2022. 

3. T. Wu, X. Wang, Y. Chen, J. Ren, and S. Ma, “A 10MHz-to-50GHz Low-Jitter Multi-Phase Clock Generator for High-Speed Oscilloscope in 0.15-µm GaAs Technology,” Int. J. Circuit Theory Appl. (IJCTA)，vol. 50, no. 2, pp. 367-381, Feb. 2022. 

4. Y. Mao, T. Wu, Y. Chen, and S. Ma, “A 0.2-Terahertz Ceramic Relic Detection System Based on Iterative Threshold Filtering Imaging and Neural Network,” Electronics, vol. 10, no. 18, p. 2213, Sep. 2021. 

5. T. Wu, J. Wei, H. Liu, S. Ma, Y. Chen, and J. Ren, “A Sub-6G SP32T Single-Chip Switch with Nanosecond Switching Speed for 5G Applications in 0.25 μm GaAs Technology,” Electronics, vol. 10, no. 12, p. 1482, Jun. 2021.

6. S. Ma, T. Wu, X. Chen, Y. Wang, H. Tang, Y. Yao, Y. Wang, Z. Zhu, J. Deng, J. Wan, Y. Lu, Z. Sun, Z. Xu, A. Riaud, C. Wu, D. W. Zhang, Y. Chai, P. Zhou, J. Ren, W. Bao, “An artificial neural network chip based on two-dimensional semiconductor,” Sci. Bull., vol. 67, no. 3, pp. 270-277, 15 Feb. 2022. 

7. C. Ma, S. Ma, L. Dai, Q. Zhang, H. Wang and H. Yu, “Wideband and High-Gain D-Band Antennas for Next-Generation Short-Distance Wireless Communication Chips,” IEEE Trans. Antennas Propag., vol. 69, no. 7, pp. 3700-3708, July 2021. 

8. D. Wei et al., “Analysis and Design of a 35-GHz Hybrid π-Network High-Gain Phase Shifter With 360° Continuous Phase Shifting,” IEEE Access, vol. 9, pp. 11943-11953, 2021. 

9. S. Ma, T. Wu, J. Zhang and J. Ren, “A 5G Wireless Event-Driven Sensor Chip for Online Power-Line Disturbances Detecting Network in 0.25 μm GaAs Process,” IEEE Trans. Ind. Electron., vol. 68, no. 6, pp. 5271-5280, June 2021. 

10. J. Zhang, T. Wu, L. Nie, S. Ma, Y. Chen and J. Ren, “A 120–150 GHz Power Amplifier in 28-nm CMOS Achieving 21.9-dB Gain and 11.8-dBm Psat for Sub-THz Imaging System,” IEEE Access, vol. 9, pp. 74752-74762, 2021. 

11. M. Li et al., “A 6.94-fJ/Conversion-Step 12-bit 100-MS/s Asynchronous SAR ADC Exploiting Split-CDAC in 65-nm CMOS,” IEEE Access, vol. 9, pp. 77545-77554, 2021. 

12. S. Ma, T. Wu and J. Ren, “A Quadrature PLL With Phase Mismatch Calibration for 32GS/s Time-Interleaved ADC,” IEEE Access, vol. 8, pp. 219695-219708, 2020. 

13. S. Ma et al., “Analog Integrated Circuits Based on Wafer-Level Two-Dimensional MoS2 Materials With Physical and SPICE Model,” IEEE Access, vol. 8, pp. 197287-197299, 2020. 

14. S. Ma, H. Yu, Q. J. Gu and J. Ren, “A 5-10-Gb/s 12.5-mW Source Synchronous I/O Interface With 3-D Flip Chip Package,” IEEE Trans. Circuits Syst. I, Reg. Papers, vol. 66, no. 2, pp. 555-568, Feb. 2019.

15. S. Ma, N. Li and J. Ren, “A 5-to-8-GHz Wideband Miniaturized Dielectric Spectroscopy Chip With I/Q Mismatch Calibration in 65-nm CMOS,” IEEE Trans. Very Large Scale Integr. (VLSI) Syst., vol. 26, no. 8, pp. 1554-1564, Aug. 2018.

16. S. Ma, H. Yu, Q. J. Gu and J. Ren, “A 7.52-dB Noise Figure 128.75–132.25-GHz Super-Regenerative Receiver With 0.615-fW√HzNEP by Coupled Oscillator Networks for Portable Imaging System in 65-nm CMOS,” IEEE Trans. Microw. Theory Techn., vol. 66, no. 9, pp. 4095-4107, Sept. 2018.

17. S. Ma, H. Yu and J. Ren, “A 32.5-GS/s Sampler With Time-Interleaved Track-and-Hold Amplifier in 65-nm CMOS,” IEEE Trans. Microw. Theory Techn., vol. 62, no. 12, pp. 3500-3511, Sep. 2014.

已发表会议论文：

1. D. Wei, T. Wu, S. Ma, and J. Ren, “A 35-to-50 GHz CMOS Low-Noise Amplifier with 22.2% -1-dB Fractional Bandwidth and 30.5-dB Maximum Gain for 5G New Radio,” in Proc. Eur. Solid State Circuits Conf. (ESSCIRC), Grenoble, France, Sep. 6-9, 2021.

2. S. Ma, T. Wu, J. Zhang and J. Ren, “A 151-to-173 GHz FMCW Transmitter Achieving 14 dBm Psat with synchronized Injection-Locked Power Amplifiers and Five in-Phase Power Combining Doublers in 65nm CMOS,” in Proc. IEEE Radio Freq. Integr. Circuits Symp. (RFIC), Philadelphia, PA, USA, June 2018, pp. 268-271.

3. S. Ma, J. Zhang, T. Wu and J. Ren, “A 35 GHz mm-Wave Pulse Radar with Pulse Width Modulated by SDM Realizing Sub-mm Resolution for 3D Imaging System,” in Proc. IEEE Radio Freq. Integr. Circuits Symp. (RFIC), Philadelphia, PA, USA, June 2018, pp. 261-263.

4. J. Zhang, T. Wu, L. Nie, S. Ma, Y. Chen, J. Ren, “A 3-to-78GHz Differential Distributed Amplifier with Ultra-Balanced Active Balun and Gain Boosting Techniques in 65-nm CMOS Process,” in Proc. IEEE Asian Solid-State Circuits Conf. (A-SSCC), Busan, Korea (South), Nov. 2021, pp. 1-3.

5. S. Ma, J. Sheng, N. Li and J. Ren, “A 7GHz-bandwidth 31.5 GHz FMCW-PLL with novel twin-VCOs structure in 65nm CMOS,” in Proc. IEEE Asian Solid-State Circuits Conf. (A-SSCC), Seoul, Korea (South), Nov. 2017, pp. 321-324.

6. D. Wei et al., “A 35 GHz Hybrid π-Network High-Gain Phase Shifter with 360° Continuous Phase Shift Range,” in IEEE MTT-S Int. Microw. Symp. Dig, Los Angeles, CA, USA, Aug. 2020, pp. 1311-1314.

7. J. Zhang, T. Wu, L. Nie, D. Wei, S. Ma and J. Ren, “A 20-30 GHz Compact PHEMT Power Amplifier Using Coupled-Line Based MCCR Matching Technique,” in IEEE MTT-S Int. Microw. Symp. Dig, Los Angeles, CA, USA, Aug. 2020, pp. 956-959.

8. X. Wang, S. Ma, B. Zhong and J. Ren, “SPICE Modeling and Verification of Wafer-Scale MoS2 Transistors,” in IEEE Int. Conf. on Solid-State & Integr. Circuit Technol. (ICSICT), Kunming, China, Nov. 2020, pp. 1-3.

9. J. Zhang, L. Nie, S. Ma and J. Ren, “A 10-18 GHz GaN Power Amplifier Based on Asymmetric Magnetically Coupled Resonator,” in IEEE Int. Midwest Symp. on Circuits and Syst. (MWSCAS), Springfield, MA, USA, Aug. 2020, pp. 802-805.

10. S. Ma, J. Lin, C. Ma and H. Yu, “A 140 GHz Transceiver for $4\times 4$ Beamforming Short-Range Communication in 65nm CMOS,” in IEEE Asia-Pac. Microw. Conf. (APMC), Singapore, Dec. 2019, pp. 1613-1615.

11. Y. Yao, J. Wei, M. Li, S. Ma, F. Ye and J. Ren, “A 256MHz Analog Baseband Chain with tunable Bandwidth and Gain for UWB Receivers,” in IEEE Int. Conf. on ASIC (ASICON), Chongqing, China, Oct. 2019, pp. 1-4.

12. T. Wu et al., “A 36–40 GHz VCO with bonding inductors for millimeter wave 5G Communication,” in IEEE Int. Conf. on ASIC (ASICON), Chongqing, China, Oct. 2019, pp. 1-4.

13. D. Wei, J. Zhang, T. Wu, S. Ma and J. Ren, “A 22-40.5 GHz UWB LNA Design in 0.15um GaAs,” in IEEE Int. Conf. on ASIC (ASICON), Chongqing, China, Oct. 2019, pp. 1-4.

14. Y. Yao et al., “SPICE Modeling and Simulation of High-Performance Wafer-Scale MoS2 Transistors,” in IEEE Int. Conf. on ASIC (ASICON), Chongqing, China, Oct. 2019, pp. 1-4.

15. J. Zhang, L. Nie, D. Wei, T. Wu, S. Ma and J. Ren, “A 130–150 GHz Power Amplifier for Millimeter Wave Imaging in 65-nm CMOS,” in IEEE Int. Conf. on ASIC (ASICON), Chongqing, China, Oct. 2019, pp. 1-4.

16. D. Wei et al., “A 140 GHz, 4 dB Noise-Figure Low-Noise Amplifier Design with the Compensation of Parasitic Capacitance CGS,” in IEEE Int. Midwest Symp. on Circuits and Syst. (MWSCAS), Dallas, TX, USA, Aug. 2019, pp. 299-302.

17. J. Wei, Y. Yao, L. Luo, S. Ma, F. Ye and J. Ren, “A Novel Nauta Transconductor for Ultra-Wideband gm-C Filter with Temperature Calibration,” in IEEE Int. Symp. on Circuits and Syst. (ISCAS), Sapporo, Japan, May 2019, pp. 1-4.

18. S. Ma, T. Wu, J. Zhang and J. Ren, “A 151-to-173 GHz FMCW Transmitter Achieving 14 dBm Psatwith synchronized Injection-Locked Power Amplifiers and Five in-Phase Power Combining Doublers in 65nm CMOS,” in IEEE Radio Freq. Integr. Circuits Symp. (RFIC), June 2018, pp. 268-271.

19. S. Ma, J. Zhang, T. Wu and J. Ren, “A 35 GHz mm-Wave Pulse Radar with Pulse Width Modulated by SDM Realizing Sub-mm Resolution for 3D Imaging System,” in IEEE Radio Freq. Integr. Circuits Symp. (RFIC), June 2018, pp. 261-263.

20. S. Ma, J. Sheng, N. Li and J. Ren, “A 7GHz-bandwidth 31.5 GHz FMCW-PLL with novel twin-VCOs structure in 65nm CMOS,” in Proc. IEEE Asian Solid-State Circuits Conf., Nov. 2017, pp. 321-324.

21. S. Ma, G. Zhou, J. Jiang, C. Chen, Y. Chen, F. Ye and J. Ren, “A Quadrature Clock Generator with Calibration for 22~31.4 GS/s Real-time Sampling System,” in Proc. Eur. Solid-State Circuits Conf. (ESSCIRC), Sep. 2015, pp. 136-139.

22. S. Ma, H. Yu, Y. Shang, W. Meng Lim and J. Ren, “A 131.5GHz, -84dBm Sensitivity Super-regenerative Receiver by Zero- phase-shifter Coupled Oscillator Network in 65nm CMOS,” in Proc. Eur. Solid-State Circuits Conf. (ESSCIRC), Sep. 2014, pp. 187-190.

23. S. Ma, F. Ye and J. Ren, “A 50–110 GHz Four-Channel Dual Injection Locked Power Amplifier with 36% PAE at 19 dBm PsatUsing Self-Start Technique in 65 nm CMOS Process,” in IEEE MTT-S Int. Microw. Symp. Dig. (IMS), June 2018, pp. 1449-1452.

24. Q. Li, S. Ma, F. Ye and J. Ren, “A low-Power PGA with DC-Offset Cancellation in 65 nm CMOS process,” in IEEE 13th International Conference on Solid-State and Integrated Circuit Technology (ICSICT), Oct. 2016, pp. 946-948.

25. S. Ma, S. Manoj, H. Yu, J. Ren and R. Weerasekera, “A 9.8 Gbps, 6.5 mW forwarded-clock receiver with phase interpolator and equalized current sampler in 65 nm CMOS,” in IEEE MTT-S Int. Microw. Symp. Dig. (IMS), May 2015, pp. 1-4.

26. S. Ma, N. Li, Fan Ye, Q. J. Gu and J. Ren, “A Wideband and Low Power Dual-Band ASK Transceiver for Intra/Inter-Chip Communication,” in IEEE MTT-S Int. Microw. Symp. Dig. (IMS), May 2015, pp. 1-4.

27. S. Ma, G. Zhou, N. Li, Fan Ye and J. Ren, “60GHz CMOS Coupled Oscillator Network by Zero-Phase-Shifters,” in IEEE 12th International Conference on Solid-State and Integrated Circuit Technology (ICSICT), Oct. 2014, pp. 1-3.

28. S. Ma, H. Yu and J. Ren, “An Overview of New Design Techniques for High Performance CMOS Millimeter-Wave Circuits,” in IEEE International Symposium on Integrated Circuits, Dec. 2014, pp. 292-295.

29. S. Ma, J. Wang, H. Yu and J. Ren, “A 32.5-GS/s Two- Channel Time-Interleaved CMOS Sampler with Switched-Source Follower based Track-and-Hold Amplifier,” in IEEE MTT-S Int. Microw. Symp. Dig. (IMS), Jun. 2014, pp. 1-3.

30. J. Wang, S. Ma, P. D. S. Manoj, M. Yu, R. Weerasekera and H. Yu, “High-speed and low-power 2.5D I/O circuits for memory-logic-integration by through-silicon interposer,” in IEEE International 3D Systems Integration Conference (3DIC), Oct. 2013, pp. 1-4.

31. S. Ma, W. Fei, H. Yu and J. Ren, “A 75.7GHz to 102GHz Rotary-traveling-wave VCO by Tunable Composite Right /Left Hand T-line,” in Proc. IEEE Custom Integr. Circuits Conf., Sep. 2013, pp. 1-4.

32. S. Ma, C. Chen, Y. Zhang and J. Ren, “A low power programmable band-pass filter with novel pseudo-resistor for portable biopotential acquisition system,” in Proc. IEEE APCCAS, Jan. 2012, pp. 232-235.

33. G. Zhou, S. Ma, F. An, N. Li, F. Ye and J. Ren, “A 30-GHz to 39-GHz mm-Wave low-power injection-locked frequency divider in 65nm CMOS,” in IEEE 11th International Conference on ASIC (ASICON), Nov. 2015, pp. 1-4.

34. Q. Chen, F. An, G. Zhou, S. Ma, F. Ye and J. Ren, “A 39GHz-80GHz Millimeter-Wave Frequency Doubler with Low Power Consumption in 65nm CMOS Technology,” in IEEE International Conference on ASIC (ASICON), Nov. 2015, pp. 1-4.

35. F. An, S. Ma, Q. Chen, G. Zhou, F. Ye and J. Ren, “A Wide-division-ratio 100MHz-to-5GHz Multi-Modulus Divider Chain for Wide-band,” in IEEE International Conference on ASIC (ASICON), Nov. 2015, pp. 1-4.

36. X. Liu, S. Ma, M. Yan, J. Ren and H. Yu, “A 5-GS/s, 13-mW, 2-channel time-interleaved asynchronous ADC in 65nm CMOS,” IEEE Int. RFIT, Taipei, 2016, pp. 1-3.

37. J. Wei, L. Luo, S. Ma, F. Ye and J. Ren, “A High Precision Bandgap Voltage Reference with MOS Transistor Curvature Compensation in 65-nm CMOS Process,” in IEEE 14th International Conference on Solid-State and Integrated Circuit Technology (ICSICT), Nov. 2018, pp. 1-3.

38. J. Zhang, T. Wu, S. Ma, Q. Hong, F. Ye and J. Ren, “A 8-12 GHz Vector-Sum Phase Shifter Using a Marchand Balun and Gilbert-Cell Structure,” in IEEE 14th International Conference on Solid-State and Integrated Circuit Technology (ICSICT), Nov. 2018, pp. 1-3.

已授权专利

1. 马顺利,吴天祥,许诺,曾超凡. “一种应用于飞行器的无空速管的空速计” ,中国发明专利，专利申请号CN202110184368.8，公告日2021年07月23日。

2. 马顺利,曾超凡,吴天祥,许诺. “一种水下航行器水流监测系统” ,中国发明专利，专利申请号CN202110185590.X，公告日2021年06月11日。

3. 马顺利,许诺,吴天祥,曾超凡. “一种大气层内飞行器气流监测系统”,中国发明专利，专利申请号CN202110185589.7，公告日2021年06月04日。

4. 马顺利; 姚玉婷; 任俊彦，“一种可变增益和带宽的模拟基带电路”,中国发明专利，专利申请号202010577618.X，公告日2020年10月30日。

5. 马顺利; 吴天祥; 任俊彦，“一种具有层叠结构的多栅指数晶体管及其制备方法”，中国发明专利，专利申请号202010281186.8，公告日2020年9月1日。

6. 马顺利; 任俊彦; 吴天祥; 李宁; 叶凡，“一种应用于毫米波通信系统的频率源”，中国发明专利，专利申请号201910022317.8，公告日2019年5月28日。

7. 马顺利; 任俊彦; 魏继鹏; 李宁; 叶凡，“一种应用于毫米波无源成像的高增益接收机”，中国发明专利，专利申请号201910022283.2，公告日2019年5月21日。

8. 马顺利;任俊彦;魏继鹏;李宁;叶凡，“应用于5G毫米波基站的CMOS集成电路带隙基准源”，中国发明专利，专利申请号201811616031.4，公告日2019年3月19日。

9. 马顺利;任俊彦;章锦程;李宁;叶凡，“应用于5G毫米波基站的四通道相控阵收发机”，中国发明专利，专利申请号201811614591.6，公告日2019年3月15日。

10. 马顺利、陈嘉澍，“放大器及其控制方法和信号处理系统”，中国发明专利，专利申请号201710097069.4，公告日2017年7月28日。

11. 马顺利、陈嘉澍，“多模分频器及其基本分频单元”，中国发明专利，专利申请号201610886083.8，公告日2017年3月29日。

12. 任俊彦、魏东、马顺利、陈汧，“一种应用于太赫兹皮肤成像领域的CMOS集成电路太赫兹检测器”， 中国发明专利，专利申请号CN201610309966.2，公告日2016年10月12日。

13. 任俊彦、马顺利、魏东、陈汧，“一种应用于太赫兹皮肤成像领域的CMOS集成电路太赫兹源”， 中国发明专利，专利申请号CN201610318871.7，公告日2016年10月12日。

参与的项目：

上海市 “科技创新行动计划”自然科学基金面上项目，基于先进CMOS工艺的5G毫米波频段多通道收发机芯片研究，在研，主持

国家自然科学基金青年科学基金项目，基于先进CMOS工艺的1-30GHz超宽带N-path滤波器研究，在研，主持

中电科24所、36所、50所横向合作，在研，主持

国家自然科学基金委员会，重点项目，超宽带CMOS毫米波频谱检测芯片关键技术，在研，参加

中华人民共和国科学技术部，国家重点研发计划，全在一芯片集成工艺，在研，参加

中华人民共和国科学技术部，国家重点研发计划，高精度毫米波/太赫兹雷达与成像芯片技术，在研，参加

国家自然科学基金应急管理项目，适合太赫兹成像的CMOS太赫兹辐射源研究，已结题，参与

国家自然科学基金面上项目，适于生态型毫米波系统集成的纳米CMOS频率综合方法研究，已结题，参与

浦东新区科技发展基金，面向智能交通的ADAS芯片，已结题，参与