长期招收具有材料/物理/电子背景的博士/硕士
欢迎对微电子器件，工艺及设备应用感兴趣同学加入
研究方向：
材料：新型功能氧化物薄膜材料制备（钙钛矿，半导体等）
工艺：前沿薄膜工艺及表界面先进表征（STM/SIMS/XPS等）
设备：超高真空互联体系设备构建（ALD-MBE-ARPES等）
器件：先进半导体器件应用及三维集成
教育背景：
2014年08月 - 2017年12月德州大学奥斯汀分校，化学工程系，博士
2010年09月 - 2014年07月天津大学，化学工程与工艺， 学士
工作学术经历：
2022年01月 - 至今复旦大学，合乐HL8注册登录，青年研究员
2018年02月 - 2021年08月美光科技(Micron Technology)，DRAM研发高级工程师
项目与人才计划：
国家自然科学基金青年基金负责人（主持）
近年代表性论文节选：
Qi Han, JunWang*, Shuangshuang Tian, Shen Hu*, XuefengWu, Rongxu Bai, Haibin Zhao, David W. Zhang, Qingqing Sun*, Li Ji*. Inorganic perovskite-based active multifunctional integrated photonic devices. Nature Communications, 15(1), 1536 (2024).
Kaisen Liu, Jingxuan Wei, Lin Meng, Dongyang Han, Li Chen, Ningtao Liu, Shen Hu*, Li Ji, Ping Cui, Wenrui Zhang*, Jichun Ye*. Activating p-type conduction and visible transparency in delafossite CuAlO2 films: The critical role of the copper valence state transition. Materials Today Physics 40, 101304 (2024).
Jiyuan Zhu, Shen Hu*, Bojia Chen, Shice Wei, Yu Zhang, Xuefeng Wu*, Xingli Zou*, Xionggang Lu, Qingqing Sun, David W Zhang, Li Ji*. Realization of tunable-performance in atomic layer deposited Hf-doped In2O3 thin film transistor via oxygen vacancy modulation. The Journal of Chemical Physics 160.4 (2024).
Xiangyu Guo, Qi Han, Jun Wang,* Shuangshuang Tian, Rongxu Bai, Haibin Zhao, Xingli Zou, Xionggang Lu, Qingqing Sun,* David W. Zhang, Shen Hu*, and Li Ji*. Optoelectronic Devices of Large-Scale Transferred All-Inorganic Lead Halide Perovskite Thin Films. ACS Applied Materials Interfaces 15, 20, 24606 (2023).
Xiangyu Guo, Hanjie Yang, Xichao Mo, Rongxu Bai, Yanrong Wang, Qi Han, Sheng Han, Qingqing Sun, David W. Zhang, Shen Hu*, and Li Ji*. Modulated wafer-scale WS2 films based on atomiclayer-deposition for various device applications. RSC advances 13(22), 14841, (2023).
Jiyuan Zhu, Shen Hu*, Bojia Chen, Yu Zhang, Shice Wei, Xiangyu Guo, Xingli Zou*, Xionggang Lu, Qingqing Sun*, David W Zhang, Li Ji*. Tunable-performance all-oxide structure field-effect transistor based atomic layer deposited Hf-doped In2O3 thin films. The Journal of Chemical Physics 159.17 (2023).
Feng Tian, Zhongya Pang*, Shen Hu*, Xueqiang Zhang, Fei Wang, Wei Nie, Xuewen Xia, Guangshi Li, Hsien-Yi Hsu, Qian Xu, Xingli Zou*, Li Ji*, and Xionggang Lu. Recent Advances in Electrochemical-Based Silicon Production Technologies with Reduced Carbon Emission. Research, 6, 0142 (2023).
Yu Zhang, Shen Hu*, Pei-Yu Chen, Jiyuan Zhu, Bojia Chen, Rongxu Bai, Hao Zhu, Lin Chen, David W. Zhang, Jack C. Lee, Qingqing Sun, John G. Ekerdt*, and Li Ji*. Post-annealing optimization of the heteroepitaxial La-doped SrSnO3 integrated on silicon via ALD. Nanoscale, 15, 9432 (2023).
Zecheng Wu, Yu Zhang, Shiqiang Lu, Rongxu Bai, Na Gao, Kai Huang, Hao Zhu, Shen Hu*, Qingqing Sun, David Wei Zhang, Xingwei Ding*, Jack C. Lee*, and Li Ji*. Amorphous semi-insulating Al-doped In2O3 growth by atomic layer deposition for thin-film transistors. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 40, 042402 (2022)
Shen Hu and John G. Ekerdt*. Preventing carbon contamination of Ge (001) during atomic layer deposition with a barium-based Zintl layer. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 36, 4, 041403 (2018).
Shen Hu, Li Ji, Pei-Yu Chen, Bryce I. Edmondson, Heng-Lu Chang, Agham Posadas, Hsin Wei Wu, Edward T. Yu, David J. Smith, Alexander A. Demkov and John G. Ekerdt*. Crystalline SrZrO3 deposition on Ge (001) by atomic layer deposition for high-k dielectric applications. Journal of Applied Physics 124, 4, 044102 (2018).
